Semiconductor Device Modeling with SPICE

Semiconductor Device Modeling with SPICE

by Paolo Antognetti, Guiseppe Massobrio

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Overview

With all the clarity and hands-on practicality of the best-selling first edition,this revised version explains the ins and outs of SPICE,plus gives new data on modeling advanced devices such as MESFETs,ISFETs,and thyristors. And because it's the only book that describes the models themselves,it helps readers gain maximum value from SPICE,rather than just telling them how to run the program. This guide is also distinctive in covering both MOS and FET models. Step by step,it takes the reader through the modeling process,providing complete information on a variety of semiconductor devices for designing specific circuit applications. These include: Pn junction and Schottky diodes; bipolar junction transistor (BJT); junction field effect transistor (JFET); metal oxide semiconductor transistor (MOST); metal semiconductor field effect transistor (MESFET); ion sensitive field effect transistor (ISFET); semiconductor controlled rectifier (SCR-thyristor).

Product Details

ISBN-13: 9780070021532
Publisher: McGraw-Hill Companies, The
Publication date: 01/01/1990
Pages: 416

Table of Contents

PN-Junction Diode and Schottky Diode.

Bipolar Junction Transistor (BJT).

Junction Field-Effect Transistor (JFET).

Metal Oxide-Semiconductor Transistor (MOST).

BJT Parameter Measurements.

MOST Parameter Measurements.

Noise and Distortion.

The SPICE Program.

Metal-Semiconductor Field-Effect Transistor, Ion-Sensitive Field-Effect Transistor, and Semiconductor-Controlled Rectifier.

Appendices: A: PN Junction.

B: MOS Junction.

C: MS Junction.

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