Silicon Carbide - Materials, Processing and Devices: 2000 Mrs Fall Meeting

Silicon Carbide - Materials, Processing and Devices: 2000 Mrs Fall Meeting

Hardcover

$91.00

Overview

The proceedings of the November 2000 symposium presents recent research on silicon carbide (SiC) for electronic device applications. The 78 papers deal with bulk growth, epitaxy, interfaces, materials, characterization, implantation and radiation damage, and metallization. Some of the topics are HTCVD growth of semi-insulating 4H-SiC crystals with low defect density, epitaxial growth of SiC on non-typical orientations and MOS interfaces, bipolar power devices, calculation of positron characteristics, and defect structures in neutron irradiated 6H-SiC studied by X-ray diffraction line profile analysis.

Annotation c. Book News, Inc., Portland, OR (booknews.com)

Product Details

ISBN-13: 9781558995505
Publisher: Materials Research Society
Publication date: 01/28/2001
Series: Mrs Symposium Proceedings Ser.
Pages: 546
Product dimensions: 6.50(w) x 1.50(h) x 9.50(d)

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