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Silicon Carbide, Volume 2: Power Devices and Sensors / Edition 1

Silicon Carbide, Volume 2: Power Devices and Sensors / Edition 1


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Product Details

ISBN-13: 9783527409976
Publisher: Wiley
Publication date: 12/08/2009
Pages: 520
Product dimensions: 6.80(w) x 9.60(h) x 1.20(d)

About the Author

Peter Friedrichs is Managing Director at SiCED, a joint venture between Siemens and Infineon located in Erlangen, Germany. SiCED develops technologies for SiC power semiconductors and systems based on these devices. Their research is devoted to device design and simulation, processing technology as well as the characterization of devices including also end of life tests.

Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, Japan, has dedicated his work to research on the growth and characterization of wide bandgap semiconductors, the process technology and physics of SiC devices. He has authored over 300 scientific publications.

Lothar Ley is recently retired as Professor of Physics and Head of the Institute of Technical Physics at the University of Erlangen, Germany. From 2002 to 2008 he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) "Silicon carbide as semiconductor material: novel aspects of crystal growth and doping". Alongside its experimental research on SiC, his group currently also works on Diamond, Carbon Nanotubes, and Graphene. He has authored and co-authored over 400 scientific publications.

Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nürnberg, Germany, and has authored over 300 scientific publications.

Table of Contents

1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices
2) Silicon Carbide power devices -
Status and upcoming challenges with a special attention to industrial application
3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts
4) Reliability aspects of SiC Schottky Diodes
5) Design, process, and performance of all-epitaxial normally-off SiC JFETs
6) Extreme Temperature SiC Integrated Circuit Technology
7) 1200 V SiC Vertical-channel-JFET based cascode switches
8) Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
9) High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen
10) 4H-SiC MISFETs with Nitrogen-containing Insulators
11) SiC Inversion Mobility
12) Development of SiC diodes, power MOSFETs and intellegent Power Modules
13) Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation
14) Application of SiC-Transistors in Photovoltaic-Inverters
15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs
16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs
17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection

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