The Physics and Technology of Amorphous SiO2

The Physics and Technology of Amorphous SiO2

by Roderick A.B. Devine

Paperback(Softcover reprint of the original 1st ed. 1988)

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Product Details

ISBN-13: 9781461283010
Publisher: Springer US
Publication date: 10/28/2011
Edition description: Softcover reprint of the original 1st ed. 1988
Pages: 579
Product dimensions: 6.69(w) x 9.61(h) x 0.05(d)

Table of Contents

Structure: Theory and Experiment.- Current Models for Amorphous SiO2.- Structural Similarities and Dissimilarities Between SiO2 and H2O.- Geometrical Methods in the Theory of Glasses.- Low Lying Excitations in Silica.- New Methods of IR Spectroscopic Investigation of Amorphous Insulating Films.- Vibrational Studies of Amorphous SiO2.- Raman Spectra of SiO2 Fibers at High Tensile Strain.- A Comparison of the Structure of a-SiO2 Prepared by Different Routes.- NMR Studies of Neutron-Irradiated Crystalline and Vitreous SiO2.- Intrinsic and Extrinsic Defects: Theory.- Electronic Structure of Defects in Amorphous SiO2.- Electron and Hole Traps Related to ? Bonded Oxygen Vacancy Centers in SiO2.- Theory of Oxygen-Vacancy Defects in Silicon Dioxide.- Total Energy Calculations for Intrinsic Defects in Amorphous SiO2.- Boron Impurity Centers in Si02: a Tight Binding Consideration.- Intrinsic and Extrinsic Defects: Experiment.- Intrinsic and Extrinsic Point Defects in a-SiO2.- Self-Trapped Excitons in Amorphous and Crystalline SiO2.- Identification of Native Defects in a-SiO2.- UV and VUV Optical Absorption due to Intrinsic and Laser Induced Defects in Synthetic Silica Fibers.- Incommensurate Phase of Quartz: Microscopic Origin and Interaction with Defects.- Gamma Ray Induced 2 eV Optical Absorption Band in Pure Silica Core Fibers.- On the Decay of X-Ray Induced Luminescence of SiO2.- On the Role of O-2 in the Luminescence of Amorphous and Crystalline SiO2.- Transformation of Radiation Induced Defect Centers as a Probe of Molecular Diffusion in a-SiO2.- Observation of the Neutral Oxygen Vacancy in Silicon Dioxide.- New Insight Into the Structure of SiO2 Glass from a Point Defect Study.- Hydrogen Bonds Between Peroxy Radicals and Hydrogen Molecules in SiO2 Glass.- ESR Studies of111< Si/SiO2 Interface.- Structure and Hyperfine Interaction of Si ? Si• Defect Clusters.- On the Relationship Between Thermal Growth and Thickness Inhomogeneities in Very Thin SiO2 Films.- The Pb Center at the Si-SiO2 Precipitate Interfaces in Buried Oxide Materials: 29Si Hyperfine Interactions and Linewidths.- Metastable and Multiply-Charged Individual Defects at the Si:SiO2 Interface.- The Influence of Disorder on the Si2p XPS Lineshape at the Si-SiO2 Interface.- Si-SiO2 Interfaces — a HRTEM Study.- Electrical and Interface Properties of MOS Structures of Getter Treated Silicon.- Influence of Different Preparation Methods on Interfacial (Si/SiO2) Parameters of Very Thin Layers.- Oxidation, Oxynitrides And Deposited Films.- Thermal Oxidation of Silicon.- A Framework for Incorporating Memory Effects of Structural Relaxation in Models for Thermal Oxidation of Silicon.- Analysis of Stress Relaxation and Growth Kinetics for Two-Step Thermal Oxidation of Silicon.- Photo-Induced Oxidation Processes in Silicon.- Growth and Structure of Argon Laser Grown SiO2.- Transport Properties of Plasma Enhanced CVD Silicon Oxynitride Films.- Characteristics of SiO2 and SiOxNy Obtained by Rapid Thermal Processes.- Evidence for Oxygen Bubbles in Fluorine Doped Amorphous Silicon Dioxide Thin Films.- Low Temperature PECVD Silicon Rich Silicon Dioxide Films Doped With Fluorine.- Transport, Trapping and Breakdown.- High Field Transport in SiO2.- Hot Electrons in SiO2: Ballistic and Steady State Transport.- Electronic Charge Transport in Thin SiO2 Films.- The Role of Hole Traps in the Degradation of Thermally Grown SiO2 Layers.- The Influence of Temperature Nitrogen Annealing on the Electrical Properties of Plasma Nitrided Oxides.- High-Field Positive-Charge Generation and Its Relation to Breakdown in a-SiO2.- Breakdown Mechanisms of Thermally Grown Silicon Dioxide at High Electric Fields.- Field Dependence of Time to Breakdown Distribution of Thin Oxides.- Radiation Effects.- Radiation Effects in MOS VLSI Structures.- Relationship Between Hole Trapping and Interface State Generation in the Si/SiO2 System.- Radiation Induced Conductivity of Thin Silicon Dioxide Films on Silicon.- Interface Degradation in Short Channel MOSFETs: Comparison Between the Effects of Radiation and Hot Carrier Injection.- Buried Dielectric Layers and Novel Applications.- Synthesis of Buried Dielectric Layers in Silica by Ion Implantation.- Electrical Properties of SIMOX Material and Device.- Formation Mechanisms and Structures of Thin Buried Layers of SiO2 Fabricated Using Ion Beam Synthesis.- Low Temperature ESR Study of SIMOX Structures.- Defects in Silicon-on-Insulator Structures Formed by O+ Implantation: Their Dependence on Implantation Temperature.- Interface Properties and Recombination Mechanisms in SIMOX Structures.- Porous Silica Sol-Gel Coatings for Nd: Glass High Power Pulsed Laser Laser Uses.- Vacuum Re-Emission of Positrons from a-SiO2 Layers.- Author Index.

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