GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.
About the Author
Vincent Consonni is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 articles in peer-reviewed journals.
Guy Feuillet is Senior Scientist at CEA (French Atomic and Alternative Energy Commission), France. He has initiated and coordinated many internal programs (GaN nanostructures, X-ray detectors for medical imaging, solid state lighting) and R&D programs during his work at CEA. He is a permanent member of the scientific advisory board at CEA/LETI, and a member of the selection committee for the French National Agency for Research (ANR). He has published about 120 papers in peer-reviewed journals.
Table of Contents
1. GaN and ZnO nanowires: low-dimensionality related effects
1.1. Quantum and optical confinement - D. Le-Si-Dang, Institut Néel, Grenoble, France.
1.2. Stress relaxation - F. Glas, LPN, Marcoussis, France.
1.3. Surface effect-related optical properties of GaN NWs - P. Lefèbvre, LCC, Montpellier, France.
1.4. Surface effect-related optical properties of ZnO NWs - T. Voss, J. Gutowski, Bremen University, Bremen Germany.
1.5. Doping and transport - J. Pernot, Institut Néel, Grenoble, France.
1.6. Specific structural defects - A. Trampert, Paul Drude Institute, Berlin, Germany.
2. Nucleation and growth mechanisms of GaN and ZnO nanowires
2.1. Collector-assisted growth of GaN NWs by molecular beam epitaxy - C. Cheìze, Paul Drude Institute, Berlin, Germany.
2.2. Self-induced growth of GaN NWs by molecular beam epitaxy - V. Consonni, LMGP, Grenoble, France.
2.3. Selective area growth of GaN NWs by molecular beam epitaxy - M. Sanchez, E. Calleja, Madrid University, Spain.
2.4. Metal-organic vapour phase epitaxy growth of GaN NWs - J. Eymery, CEA-INAC, Grenoble, France.
2.5. Metal-organic vapour phase epitaxy growth of ZnO NWs - V. Sallet, GEMaC, Versailles, France.
2.6. Pulsed-laser deposition growth of ZnO NWs - C.P. Dietrich, M. Grundmann, Leipzig University, Germany.
2.7. Solution growth of ZnO NWs - T. Pauporté, LECIME, Paris, France.