Characterization Methods for Submicron MOSFETs / Edition 1

by Hisham Haddara

Overview

It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen­ eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param­ eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi­ tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.

Product Details

ISBN-13:	9780792396956
Publisher:	Springer US
Publication date:	01/31/1996
Series:	The Springer International Series in Engineering and Computer Science , #352
Edition description:	1995
Pages:	232
Product dimensions:	6.10(w) x 9.25(h) x 0.02(d)

Table of Contents

1 Static Measurements and Parameter Extraction.- 1.1 Introduction.- 1.2 Modeling of MOSFET DC Characteristics.- 1.3 MOSFET Parameter Extraction Methods.- 1.4 Measuring Techniques.- 1.5 Summary and Conclusion.- 2 Small Signal Characterization of VLSI MOSFETs.- 2.1 Introduction.- 2.2 Small Signal AC Model.- 2.3 Channel Frequency Response of MOSFETs.- 2.4 The Split Admittance Technique.- 2.5 Dynamic Transconductance.- 3 Charge Pumping.- 3.1 Introduction.- 3.2 Early Experiments and Basic Principle of CP Measurement.- 3.3 Interface State Generation-Recombination Kinetics.- 3.4 Experimental Techniques.- 3.5 Applications of Charge Pumping.- 3.6 Conclusion.- 4 Deep Level Transient Spectroscopy.- 4.1 Introduction.- 4.2 Generation, Recombination and Trapping Statistics.- 4.3 MOSFET Current Transient Spectroscopy.- 4.4 Signal Analysis.- 4.5 Depletion MOSFET Current Transient Spectroscopy.- 4.6 MOSFET Current DLTS Measurement System.- 5 Individual Interface Traps and Telegraph Noise.- 5.1 Introduction.- 5.2 Observation of Single Carrier Trapping.- 5.3 Experimental Properties of Individual Interface Traps.- 5.4 Interpretation and Modeling.- 5.5 Conclusion.- 6 Characterization of SOI MOSFETs.- 6.1 Introduction.- 6.2 Interest of MOS-SOI Technology.- 6.3 Synthesis of SOI Structures.- 6.4 Wafer Screening by—-MOSFET Technique.- 6.5 Capacitance and Conductance Techniques.- 6.6 SOI-MOSFETs: Basic Operation and Typical Characteristics.- 6.7 Profiling the Vertical Inhomogeneities.- 6.8 Charge Pumping Technique.- 6.9 Low Frequency Noise.- 6.10 Drain Current Transient Technique.- 6.11 Concluding Remarks.- 7 Modern Analog IC Characterization Techniques.- 7.1 Introduction.- 7.2 Random Mismatch in MOS Transistors.- 7.3 The Extraction of BJT Base Spreading Resistance.- 7.4 MismatchCharacterization of BJT for Statistical CAD.- 7.5 Test Structure for Resistance Matching Properties.- 7.6 MOS Capacitance Technique.

Editorial Reviews

Deals with techniques for characterization of submicron devices, focusing on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially silicon-on-insulator. Describes techniques such as charge pumping; small signal characterization; deep level transient spectroscopy; and modern analog IC characterization techniques. Of interest to researchers and graduate students familiar with MOS device physics working in the field of device characterization and modeling; industrial, material, and process engineers working in device development; and circuit designers. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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