Doping Engineering for Front-End Processing: Volume 1070

by B. J. Pawlak (Editor), M. L. Pelaz (Editor), M. Law (Editor), K. Surugo (Editor)

Overview

Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

Product Details

ISBN-13:	9781605110400
Publisher:	Cambridge University Press
Publication date:	10/17/2008
Series:	MRS Proceedings , #1070
Pages:	319
Product dimensions:	6.10(w) x 9.30(h) x 0.90(d)

Table of Contents

Preface; Part I. Ultra Shallow Junctions I; Part II. Shallow Junction Contacting; Part III. Poster Session; Part IV. Ultra Shallow Junctions II; Part V. Solid Phase Epitaxial Regrowth; Part VI. Modeling and Simulation; Author index; Subject index.