Electrical And Thermal Characterization Of Mesfets, Hemts And Hbts

by Robert Anholt

Overview

Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.

Product Details

ISBN-13:	9780890067499
Publisher:	Artech House, Incorporated
Publication date:	11/30/1994
Series:	Artech House Microwave Library Series
Pages:	324
Product dimensions:	6.00(w) x 9.00(h) x 0.88(d)

Table of Contents

Contents: Physical Modeling of III-V Semiconductor Devices. How to Measure Temperature-dependent Equivalent Circuits. Self-heating in Transistors. GaAs MESFET Equivalent Circuits (Room Temperature). Temperature-dependent MESFET Equivalent Circuits. HEMT Equivalent Circuits (Room Temperature). Temperature-dependent HEMT Equivalent Circuits. Gate Currents in MESFETs and HEMTs. Heterojunction Bipolar Transistors. Circuit Modeling.

Editorial Reviews

Presents observations and an analysis of the way III-V transistor electrical characteristics change with operating temperature, and through device self-heating, with power dissipation. Covers physical modeling of III-V semiconductor devices, measuring temperature- dependent equivalent circuits, and circuit modeling. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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