Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs / Edition 1

by William Liu

Overview

A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including:
* An introductory chapter on the basic properties, growth process, and device physics of III-V materials
* Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design
* A discussion of transistor fabrication and device comparison
* 55 worked-out examples illustrating design considerations for a given application
* 215 figures and end-of-chapter practice problems
* Appendices listing parameters for various materials and transistor types

Product Details

ISBN-13:	9780471297000
Publisher:	Wiley
Publication date:	04/07/1999
Pages:	520
Sales rank:	892,791
Product dimensions:	6.54(w) x 9.57(h) x 1.46(d)

About the Author

WILLIAM LIU is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has published numerous papers, reviews, and chapter contributions on HBTs. He holds thirteen U.S. patents on device and circuit design in various HBT technologies. He is a senior member of the IEEE.

Table of Contents

Basic Properties and Device Physics of III-V Materials.

Two-Terminal Heterojunction Devices.

HBT D.C. Characteristics.

HBT High-Frequency Properties.

FET D.C. Characteristics.

FET High-Frequency Properties.

Transistor Fabrication and Device Comparison.

Appendices.

Index.

Editorial Reviews

After an introductory chapter on basic properties and device physics, this textbook covers the dc and high-frequency operations of the major semiconductor devices based on III-V materials<-- >heterojunction bipolar transistors (HBTs), metal-semiconductor field- effect transistors (MESFETs), and heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). Annotation c. by Book News, Inc., Portland, Or.

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