Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990: Symposium Held April 10-12, 2007, San Francisco, California, U.S.A.

In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrica...