This book focuses on the theory of phonon interactions in nanoscale structures with particular emphasis on modern electronic and optoelectronic devices. A key goal is to describe tractable models of confined phonons and how these are applied to calculations of basic properties and phenomena of semiconductor heterostructures. The level of presentation is appropriate for undergraduate and graduate students in physics and engineering with some background in quantum mechanics and solid state physics or devices.
|Publisher:||Cambridge University Press|
|Edition description:||New Edition|
|Product dimensions:||6.85(w) x 9.72(h) x 0.67(d)|
About the Author
Table of ContentsPreface; The first part: 1. Phonons in nanostructures; 2. Phonons in bulk cubic crystals; 3. Phonons in bulk würtzite crystals; 4. Raman properties of bulk phonons; 5. Occupation number representation and general formulation of carrier-phonon scattering rates; 6. Anharmonic coupling of phonons; 7. Continuum models for phonons in bulk and dimensionally-confined semiconductors; 8. Carrier-LO-phonon scattering; 9. Carrier-acoustic-phonon scattering; 10. Recent developments on electron-phonon interactions in structures in electronic and optoelectronic devices; 11. Concluding considerations; Appendices.