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Overview
Stroscio (physics, Duke U.) and Dutta (the Army Research Office's Director of Research and Technology Integration) focus on the study of phonons and phonon-mediated effects in structures with nanoscale dimensional confinement in one or more spatial dimensions. Pertinent to the field of optoelectronics, quantum electronics, materials science, chemistry, and biology, the phenomenon explored is important in technologies needed to fabricate nanoscale structures and devices. Geared toward practicing physicists, the theme of the work is the description of optical and acoustic phonons in such nanostructures as the superconductor superlattice, quantum wires, and carbon nanotubes.
Annotation c. Book News, Inc., Portland, OR (booknews.com)
Product Details
ISBN-13: | 2900521018059 |
---|---|
Publication date: | 08/22/2005 |
Pages: | 292 |
Product dimensions: | 6.00(w) x 1.25(h) x 9.00(d) |
About the Author
Dr. Michael A. Stroscio earned a Ph.D. in Physics from Yale University and held research positions at the Los Alamos Scientific Laboratory and the Johns Hopkins University Applied Physics Laboratory, before moving into the management of federal research and development at a variety of U.S. government agencies. Dr. Stroscio has served as a policy analyst for the White House Office of Science and Technology Policy, and as Vice Chairman of the White House Panel on Scientific Communication. He has taught and lectured on Physics and Electrical Engineering at several universities including Duke University, the North Carolina State University and the University of California at Los Angeles.
Table of Contents
Preface | xi | |
Chapter 1 | Phonons in nanostructures | 1 |
1.1 | Phonon effects: fundamental limits on carrier mobilities and dynamical processes | 1 |
1.2 | Tailoring phonon interactions in devices with nanostructure components | 3 |
Chapter 2 | Phonons in bulk cubic crystals | 6 |
2.1 | Cubic structure | 6 |
2.2 | Ionic bonding - polar semiconductors | 6 |
2.3 | Linear-chain model and macroscopic models | 7 |
2.3.1 | Dispersion relations for high-frequency and low-frequency modes | 8 |
2.3.2 | Displacement patterns for phonons | 10 |
2.3.3 | Polaritons | 11 |
2.3.4 | Macroscopic theory of polar modes in cubic crystals | 14 |
Chapter 3 | Phonons in bulk wurtzite crystals | 16 |
3.1 | Basic properties of phonons in wurtzite structure | 16 |
3.2 | Loudon model of uniaxial crystals | 18 |
3.3 | Application of Loudon model to III-V nitrides | 23 |
Chapter 4 | Raman properties of bulk phonons | 26 |
4.1 | Measurements of dispersion relations for bulk samples | 26 |
4.2 | Raman scattering for bulk zincblende and wurtzite structures | 26 |
4.2.1 | Zincblende structures | 28 |
4.2.2 | Wurtzite structures | 29 |
4.3 | Lifetimes in zincblende and wurtzite crystals | 30 |
4.4 | Ternary alloys | 32 |
4.5 | Coupled plasmon-phonon modes | 33 |
Chapter 5 | Occupation number representation | 35 |
5.1 | Phonon mode amplitudes and occupation numbers | 35 |
5.2 | Polar-optical phonons: Frohlich interaction | 40 |
5.3 | Acoustic phonons and deformation-potential interaction | 43 |
5.4 | Piezoelectric interaction | 43 |
Chapter 6 | Anharmonic coupling of phonons | 45 |
6.1 | Non-parabolic terms in the crystal potential for ionically bonded atoms | 45 |
6.2 | Klemens' channel for the decay process LO [right arrow] LA(1) + LA(2) | 46 |
6.3 | LO phonon lifetime in bulk cubic materials | 47 |
6.4 | Phonon lifetime effects in carrier relaxation | 48 |
6.5 | Anharmonic effects in wurtzite structures: the Ridley channel | 50 |
Chapter 7 | Continuum models for phonons | 52 |
7.1 | Dielectric continuum model of phonons | 52 |
7.2 | Elastic continuum model of phonons | 56 |
7.3 | Optical modes in dimensionally confined structures | 60 |
7.3.1 | Dielectric continuum model for slab modes: normalization of interface modes | 61 |
7.3.2 | Electron-phonon interaction for slab modes | 66 |
7.3.3 | Slab modes in confined wurtzite structures | 71 |
7.3.4 | Transfer matrix model for multi-heterointerface structures | 79 |
7.4 | Comparison of continuum and microscopic models for phonons | 90 |
7.5 | Comparison of dielectric continuum model predictions with Raman measurements | 93 |
7.6 | Continuum model for acoustic modes in dimensionally confined structures | 97 |
7.6.1 | Acoustic phonons in a free-standing and unconstrained layer | 97 |
7.6.2 | Acoustic phonons in double-interface heterostructures | 100 |
7.6.3 | Acoustic phonons in rectangular quantum wires | 105 |
7.6.4 | Acoustic phonons in cylindrical structures | 111 |
7.6.5 | Acoustic phonons in quantum dots | 124 |
Chapter 8 | Carrier-LO-phonon scattering | 131 |
8.1 | Frohlich potential for LO phonons in bulk zincblende and wurtzite structures | 131 |
8.1.1 | Scattering rates in bulk zincblende semiconductors | 131 |
8.1.2 | Scattering rates in bulk wurtzite semiconductors | 136 |
8.2 | Frohlich potential in quantum wells | 140 |
8.2.1 | Scattering rates in zincblende quantum-well structures | 141 |
8.2.2 | Scattering rates in wurtzite quantum wells | 146 |
8.3 | Scattering of carriers by LO phonons in quantum wires | 146 |
8.3.1 | Scattering rate for bulk LO phonon modes in quantum wires | 146 |
8.3.2 | Scattering rate for confined LO phonon modes in quantum wires | 150 |
8.3.3 | Scattering rate for interface-LO phonon modes | 154 |
8.3.4 | Collective effects and non-equilibrium phonons in polar quantum wires | 162 |
8.3.5 | Reduction of interface-phonon scattering rates in metal-semiconductor structures | 165 |
8.4 | Scattering of carriers and LO phonons in quantum dots | 167 |
Chapter 9 | Carrier-acoustic-phonon scattering | 172 |
9.1 | Carrier-acoustic-phonon scattering in bulk zincblende structures | 172 |
9.1.1 | Deformation-potential scattering in bulk zincblende structures | 172 |
9.1.2 | Piezoelectric scattering in bulk semiconductor structures | 173 |
9.2 | Carrier-acoustic-phonon scattering in two-dimensional structures | 174 |
9.3 | Carrier-acoustic-phonon scattering in quantum wires | 175 |
9.3.1 | Cylindrical wires | 175 |
9.3.2 | Rectangular wires | 181 |
Chapter 10 | Recent developments | 186 |
10.1 | Phonon effects in intersubband lasers | 186 |
10.2 | Effect of confined phonons on gain of intersubband lasers | 195 |
10.3 | Phonon contribution to valley current in double-barrier structures | 202 |
10.4 | Phonon-enhanced population inversion in asymmetric double-barrier quantum-well lasers | 205 |
10.5 | Confined-phonon effects in thin film superconductors | 208 |
10.6 | Generation of acoustic phonons in quantum-well structures | 212 |
Chapter 11 | Concluding considerations | 218 |
11.1 | Pervasive role of phonons in modern solid-state devices | 218 |
11.2 | Future trends: phonon effects in nanostructures and phonon engineering | 219 |
Appendices | 221 | |
Appendix A | Huang-Born theory | 221 |
Appendix B | Wendler's theory | 222 |
Appendix C | Optical phonon modes in double-heterointerface structures | 225 |
Appendix D | Optical phonon modes in single- and double-heterointerface wurtzite structures | 236 |
Appendix E | Fermi golden rule | 250 |
Appendix F | Screening effects in a two-dimensional electron gas | 252 |
References | 257 | |
Index | 271 |
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