Pub. Date:
Springer US
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 / Edition 1

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 / Edition 1

by B.E. Deal, C.R. Helms


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Product Details

ISBN-13: 9780306444197
Publisher: Springer US
Publication date: 09/30/1993
Edition description: 1993
Pages: 503
Product dimensions: 7.01(w) x 10.00(h) x 0.04(d)

Table of Contents

Thermal Oxidation Mechanisms and Modeling: Silicon Oxides and Oxidation; A.M. Stoneham. Novel Oxidation Methods and Characterization: New Approach to Chemically Enhanced Oxidation; R.J. Jaccodine. Deposition and Properties of SiO2: Low Temperature Synthesis and Characterization of Silicon Dioxide Films; G.S. Chakravarthy, et al. Chemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition: Pre-Gate Oxide Si Surface Control; M. Morita, T. Ohmi. Chemical, Structural, and Microroughness Effects at the SiSiO2 Interface: Dependence of Surface Microroughness on Types of Silicon Substrates; T. Ohmi, et al. Novel Structures, Processes, and Phenomena: Properties of Simox and Related Systems; S. Cristoloveanu, T. Ouisse. Defects and Hot-Carrier Induced Damage in SiSiO2 Systems: Radiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems. 56 additional articles. Index.

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