Semiconductor-Laser Fundamentals: Physics of the Gain Materials / Edition 1

Semiconductor-Laser Fundamentals: Physics of the Gain Materials / Edition 1

ISBN-10:
3642083862
ISBN-13:
9783642083860
Pub. Date:
12/07/2010
Publisher:
Springer Berlin Heidelberg
ISBN-10:
3642083862
ISBN-13:
9783642083860
Pub. Date:
12/07/2010
Publisher:
Springer Berlin Heidelberg
Semiconductor-Laser Fundamentals: Physics of the Gain Materials / Edition 1

Semiconductor-Laser Fundamentals: Physics of the Gain Materials / Edition 1

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Overview

Since Fall of 1993, when we completed the manuscript of our book "Semi­ conductor-Laser Physics" [W.W. Chow, S.W. Koch, and M. Sargent III (Springer, Berlin, Heidelberg, 1994)] many new and exciting developments have taken place in the world of semiconductor lasers. Novel laser and ampli­ fier structures were developed, and others, for example, the VCSEL (vertical cavity surface emitting laser) and monolithic MOPA (master oscillator power amplifier), made the transition from research and development to production. When investigating some of these systems, we discovered instances when de­ vice performance, and thus design depend critically on details of the gain medium properties, e.g., spectral shape and carrier density dependence of the gain and refractive index. New material systems were also introduced, with optical emission wave­ lengths spanning from the mid-infrared to the ultraviolet. Particularly note­ worthy are laser and light-emitting diodes based on the wide-bandgap group-III nitride and II~VI compounds. These devices emit in the visible to ultra-violet wavelength range, which is important for the wide variety of optoelectronic applications. While these novel semiconductor-laser materi­ als show many similarities with the more conventional near-infrared systems, they also possess rather different material parameter combinations. These dif­ ferences appear as band structure modifications and as increased importance of Coulomb effects, such that, e.g., excitonic signatures resulting from the at­ tractive electron-hole interaction are generally significantly more prominent in the wide bandgap systems.

Product Details

ISBN-13: 9783642083860
Publisher: Springer Berlin Heidelberg
Publication date: 12/07/2010
Edition description: Softcover reprint of hardcover 1st ed. 1999
Pages: 245
Product dimensions: 6.10(w) x 9.25(h) x 0.24(d)

Table of Contents

1. Basic Concepts.- 2. Free-Carrier Theory.- 3. Coulomb Effects.- 4. Correlation Effects.- 5. Bulk Band Structures.- 6. Quantum Wells.- 7. Applications.- References.
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