Semiconductor Quantum Well Intermixing: Material Properties and Optoelectronic Applications

by J. T. Lie (Editor)

Overview

Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.

Product Details

ISBN-13:	9780367447472
Publisher:	Taylor & Francis
Publication date:	01/07/2020
Series:	Optoelectronic Properties of Semiconductors and Superlattice , #8
Pages:	712
Product dimensions:	6.12(w) x 9.19(h) x (d)

About the Author

Lie, J. T.

Table of Contents

1. Theories of Band Structure and Optical Properties of Interdiffused Wuantum Wells K.S. Chan and E.H. Li 2. Interdiffusion Mechanisms in III-V Materials W.P. Gillin 3. Interdiffusion in Lattice-Matched Quantum Wells and Self-Formed Quantum Dots Composed of III-V Semiconductors K. Mukai 4. Interdiffusion in Strained Layer In^OxGa^O1-x As/GaAs Heterostructures F. Iikawa 5. Strain in Interdiffused In^O0.53Ga^O0.47As/InP Quantum Wells J. Micallef 6. Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation E.S. Koteles 7. Control of Layer Intermixing by Impurities and Defects D. Sun and P. Mei 8. Quantum Wells Intermixing by Ion Implantation and Anodic Oxidation H.H. Tan, S. Yuan, M. Gal and C. Jagadish 9. Impurity-Free Vacancy Disordering of GaAs/AlGaAs Quantum Well Structures: Processing and Devices J.H. Marsh and A.C. Bryce 10. Selective Interdiffusion of GaAs/AlGaAs Quantum Wells Through SiO^O2 Encapsulation - Comparison with the Ion Implantation Approach A. Pépin and C. Vieu 11. Dependence of Dielectric Cap Quantum Well Disordering on the Characteristics of Dielectric Capping Film W.J. Choi 12. Selective Area Disordering of Quantum Wells for Integrated All-Optical Devices P. Li Kam Wa 13. Polarization-Dependent Refractive-Index Change Induced by Superlattice Disordering and Its Applications Y. Suzuki 14. Broadspectrum InGaAs/InP Quantum Well Infrared Photodetector Via Quantum Well Intermixing D. Sengupta, Y.-C. Chang and G. Stillman 15. Diffused Quantum Well Modulators W.C.H. Choy and E.H. Li 16. Analysis and Design of Semiconductor Lasers Using Diffused Quantum Wells Structure S.F. Yu and C.W. Lo Index