SiC Power Module Design: Performance, robustness and reliability

by Alberto Castellazzi (Editor), Andrea Irace (Editor)

Overview

High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.

This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs.

Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.

Product Details

ISBN-13:	9781785619076
Publisher:	The Institution of Engineering and Technology
Publication date:	02/03/2022
Series:	Energy Engineering
Pages:	360
Product dimensions:	6.14(w) x 9.21(h) x (d)

About the Author

Alberto Castellazzi is a professor at the Kyoto Universityof Advanced Science, Japan. His research focuses on advanced solid-state power processing, including the characterization and use of wide-band-gap semiconductor devices. He has 20 years' experience in power electronics R&D from both industry and academia, including Universityof Nottingham, UK, SIEMENS (Germany), ETH Zurich (Switzerland), and ALSTOM (France). He is a member of The Power Electronic Conversion Technology Annex (PECTA) of the IEA.

Andrea Irace is a professor of electronics at the Universityof Naples Federico II, Italy. His research focuses on modelling and simulation of WBG devices for power electronics. Prior assignments included the Delft Institute of Microelectronics and Submicron Technology. He has authored more than 120 papers in international publications.

Table of Contents

• Chapter 1: SiC power MOSFETs and their application
• Chapter 2: Anatomy of a multi-chip power module
• Chapter 3: Established module design and transfer to SiC technology
• Chapter 4: Temperature-dependent modeling of SiC power MOSFETs for within- and out-of-SOA simulations
• Chapter 5: Optimum module design I: electrothermal
• Chapter 6: Optimum module design II: impact of parameter design spread
• Chapter 7: Optimum module design III: electromagnetic
• Chapter 8: Power module lifetime evaluation methodologies
• Chapter 9: High-temperature capable SiC power modules by Ag sintering on various metal interfaces
• Chapter 10: Advanced die-attach validation technologies
• Chapter 11: Power module degradation monitoring
• Chapter 12: Advanced thermal management solutions
• Chapter 13: Emerging packaging concepts and technologies