Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

by E. Kasper, D.J. Paul

Overview

Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

Product Details

ISBN-13:	9783642060380
Publisher:	Springer Berlin Heidelberg
Publication date:	12/15/2010
Series:	NanoScience and Technology
Edition description:	Softcover reprint of hardcover 1st ed. 2005
Pages:	364
Product dimensions:	6.10(w) x 9.25(h) x 0.24(d)

Table of Contents

Material Science.- Resumé of Semiconductor Physics.- Realisation of Potential Barriers.- Electronic Device Principles.- Heterostructure Bipolar Transistors - HBTs.- Hetero Field Effect Transistors (HFETs).- Tunneling Phenomena.- Optoelectronics.- Integration.- Outlook.