Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces
Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces is the first book written to both comprehensively describe these concepts and technologies and compare the strengths and weaknesses of various techniques. Readers will learn about the basic growth and characterization of Si crystals, including sections on the history of cast methods for Si ingots for solar cells. Methods discussed include the dendrite cast method, as well as other significant technologies, including the high-performance (HP) cast and mono-like cast methods. These concepts, growth mechanisms, growth technologies, and the problems that still need to be solved are all included in this comprehensive volume. - Covers the concept of crystal growth, providing an understanding of each growth method - Discusses the quality of Si ingot, mainly from the viewpoint of crystal defects and their control - Reviews fundamental characterization concepts to discern the quality of ingots and wafers - Discusses concepts and technologies to establish a low-temperature region in a Si melt using the NOC method in order to obtain a uniform and large Si single ingot with low stress
1133509413
Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces
Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces is the first book written to both comprehensively describe these concepts and technologies and compare the strengths and weaknesses of various techniques. Readers will learn about the basic growth and characterization of Si crystals, including sections on the history of cast methods for Si ingots for solar cells. Methods discussed include the dendrite cast method, as well as other significant technologies, including the high-performance (HP) cast and mono-like cast methods. These concepts, growth mechanisms, growth technologies, and the problems that still need to be solved are all included in this comprehensive volume. - Covers the concept of crystal growth, providing an understanding of each growth method - Discusses the quality of Si ingot, mainly from the viewpoint of crystal defects and their control - Reviews fundamental characterization concepts to discern the quality of ingots and wafers - Discusses concepts and technologies to establish a low-temperature region in a Si melt using the NOC method in order to obtain a uniform and large Si single ingot with low stress
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Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces

Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces

by Kazuo Nakajima
Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces

Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces

by Kazuo Nakajima

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$190.00 

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Overview

Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces is the first book written to both comprehensively describe these concepts and technologies and compare the strengths and weaknesses of various techniques. Readers will learn about the basic growth and characterization of Si crystals, including sections on the history of cast methods for Si ingots for solar cells. Methods discussed include the dendrite cast method, as well as other significant technologies, including the high-performance (HP) cast and mono-like cast methods. These concepts, growth mechanisms, growth technologies, and the problems that still need to be solved are all included in this comprehensive volume. - Covers the concept of crystal growth, providing an understanding of each growth method - Discusses the quality of Si ingot, mainly from the viewpoint of crystal defects and their control - Reviews fundamental characterization concepts to discern the quality of ingots and wafers - Discusses concepts and technologies to establish a low-temperature region in a Si melt using the NOC method in order to obtain a uniform and large Si single ingot with low stress

Product Details

ISBN-13: 9780128200704
Publisher: Elsevier Science
Publication date: 10/07/2019
Sold by: Barnes & Noble
Format: eBook
Pages: 390
File size: 92 MB
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About the Author

Professor Kazuo Nakajima is the professor emeritus of IMR Tohoku University, Japan as well as the Pao Yu-Kong Chair with Zhejiang University's State Key Laboratory of Silicon Materials, China. He is a member of the Japan Society of Applied Physics and the Japanese Association for Crystal Growth and series on the Editorial Board of the Journal of Crystal Growth. In 2006, Dr. Nakajima founded and chaired the 1st International Workshop on Science and Technology of Crystalline Si Solar Cells, a workshop that continues to be held annually. In 2007-2008, he chaired the 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4). For his achievements of the crystal growth, the Japanese Association for Crystal Growth awarded him "The 12th Achievement Award & Isamu Akasaki Award at 2017, and the International Organization for Crystal Growth (IOCG) awarded him "Laudise Prize at 2019. He has written over 16 books and handbooks and published over 350 papers, as well as being the inventor or co-inventor of 64 registered patents in the areas of III-V liquid phase epitaxial growth, crystal growth for semiconductors, optical devices, solar cells and plastic deformation.
Professor Kazuo Nakajima is the professor emeritus of IMR Tohoku University, Japan as well as the Pao Yu-Kong Chair with Zhejiang University’s State Key Laboratory of Silicon Materials, China. He is a member of the Japan Society of Applied Physics and the Japanese Association for Crystal Growth and series on the Editorial Board of the Journal of Crystal Growth. In 2006, Dr. Nakajima founded and chaired the 1st International Workshop on Science and Technology of Crystalline Si Solar Cells, a workshop that continues to be held annually. In 2007-2008, he chaired the 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4). For his achievements of the crystal growth, the Japanese Association for Crystal Growth awarded him “The 12th Achievement Award & Isamu Akasaki Award” at 2017, and the International Organization for Crystal Growth (IOCG) awarded him “Laudise Prize” at 2019. He has written over 16 books and handbooks and published over 350 papers, as well as being the inventor or co-inventor of 64 registered patents in the areas of III-V liquid phase epitaxial growth, crystal growth for semiconductors, optical devices, solar cells and plastic deformation.

Table of Contents

1. Basic growth and crystallographic quality of Si crystals for solar cells2. Basic characterization and electrical properties of Si crystals3. Growth of Si multicrystalline ingots using the conventional cast method4. Dendritic cast method5. High performance (HP) cast method6. Mono-like cast method7. Growth of Si ingots using cast furnaces by the NOC method8. Future technologies of Si ingots for solar cells

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A review of the crystal growth and defects of Si ingots for solar cells and their main technologies for ingot growth development

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