Defect Recognition and Image Processing in Semiconductors 1997: Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997 / Edition 1

Defect Recognition and Image Processing in Semiconductors 1997: Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997 / Edition 1

ISBN-10:
0750305002
ISBN-13:
9780750305006
Pub. Date:
01/01/1998
Publisher:
Taylor & Francis
ISBN-10:
0750305002
ISBN-13:
9780750305006
Pub. Date:
01/01/1998
Publisher:
Taylor & Francis
Defect Recognition and Image Processing in Semiconductors 1997: Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997 / Edition 1

Defect Recognition and Image Processing in Semiconductors 1997: Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997 / Edition 1

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Overview

Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

Product Details

ISBN-13: 9780750305006
Publisher: Taylor & Francis
Publication date: 01/01/1998
Series: Institute of Physics Conference Series , #160
Edition description: 1997 ed.
Pages: 524
Product dimensions: 6.12(w) x 9.19(h) x (d)

Table of Contents

Preface. Glossary. Nanoscanning (9 papers). Electron beam methods (9 papers). Optical methods (8 papers). Mapping (10 papers). X-ray methods (4 papers). Other and combined methods (8 papers). Image processing. Standardization. Si and SiGe mixed crystals (15 papers). SiC (3 papers). GaN (6 papers). Other III-V compounds (12 papers). II-VI compounds, phosphors, oxides and alternative substrates (4 papers). Processing and defects (3 papers). Defect recognition in devices and degradation (11 papers). Author and subject indices.
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