Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
1102251797
Doping Engineering for Front-End Processing: Volume 1070
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
35.0
In Stock
5
1
Doping Engineering for Front-End Processing: Volume 1070
336
Doping Engineering for Front-End Processing: Volume 1070
336
35.0
In Stock
Product Details
| ISBN-13: | 9781107408548 |
|---|---|
| Publisher: | Cambridge University Press |
| Publication date: | 06/05/2014 |
| Series: | MRS Proceedings |
| Pages: | 336 |
| Product dimensions: | 5.98(w) x 9.02(h) x 0.71(d) |
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