Semiconductor Quantum Wells And Superlattices For Long-Wavelength Infrared Detectors

by M. O. Manasreh, Gary L. McCoy

Overview

This book helps you understand the basic properties of semiconductor quantum wells and superlattices and describes how they can be utilized for long-wavelength infrared detectors and imaging arrays. Includes 111 illustrations and 237 equations.

Product Details

ISBN-13:	9780890066034
Publisher:	Artech House, Incorporated
Publication date:	12/01/1993
Series:	Artech House Materials Science Library Series
Pages:	280
Product dimensions:	6.00(w) x 9.00(h) x 0.75(d)

Table of Contents

	Foreword	xi
	Preface	xiii
Chapter 1	Introduction to Long-Wavelength Infrared Quantum Detectors	1
1.1	Background	1
1.2	Quantum Detectors Based on Semiconductor Quantum Wells and Superlattices	2
1.3	GaAs/Al[subscript x]Ga[subscript 1-x]As Multiple Quantum Wells	8
1.4	InAs/Ga[subscript 1-x]In[subscript x]Sb Strained-Layer Superlattices	11
1.5	Si/Si[subscript 1-x]Ge[subscript x] Multiple Quantum Wells	13
1.6	Conclusion	14
	References	15
Chapter 2	Theoretical Modeling of the Intersubband Transitions in III-V Semiconductor Multiple Quantum Wells	19
2.1	Introduction	19
2.2	The Effective Mass Equation	20
2.3	Conduction Band States in Quantum Wells	22
2.4	The Finite Difference Method	25
2.5	Valence Band States	28
2.5.1	Bulk k - p Theory	29
2.5.2	Application of the 4 [times] 4 k - p Theory to the Valence Bands in Quantum Wells	30
2.6	Effect of Strain on the Conduction and Valence Bands of Quantum Wells	31
2.6.1	Conduction Band States	33
2.6.2	Valence Band States	33
2.6.3	Bulk Results	35
2.7	Absorption Coefficient for the Conduction Intersubband Transition in GaAs/AlGaAs Multiple Quantum Wells	37
2.7.1	Temperature and Nonparabolicity Effects on the Intersubband Transition	40
2.7.2	Many-Body Effects on the Intersubband Transition	43
2.8	Conclusion	52
	Acknowledgments	52
	References	53
Chapter 3	Long-Wavelength Infrared Photodetectors Based on Intersubband Transitions in III-V Semiconductor Quantum Wells	55
3.1	Introduction	55
3.1.1	Purpose and Scope	55
3.1.2	Quantum Well Detector Basics	57
3.1.3	Organization	58
3.2	Fundamentals of Infrared Detection for Staring Applications	59
3.3	The Development of GaAs/AlGaAs Multiple Quantum Well Photoconductive Detectors	62
3.3.1	Overview	63
3.3.2	Principles of Operation	65
3.3.3	Development of the Basic Device	66
3.3.4	Long-Wavelength, Wide-Bandwidth Detectors	69
3.3.5	Low Dark Current Devices	71
3.3.6	High-Efficiency Detectors	74
3.4	Performance Models for GaAs/AlGaAs Multiple Quantum Well Photconductive Detectors	77
3.4.1	Dark Current	78
3.4.2	Collection Efficiency	89
3.4.3	Correlated Noise	94
3.5	Device Optimization for Applications	95
3.5.1	Dependence of NETD on Quantum Well Detector Parameters	96
3.5.2	Two Optimization Examples	101
3.6	Conclusion	106
	References	106
Chapter 4	Far-Infrared Materials Based on InAs/GaInSb Type II, Strained-Layer Superlattices	109
4.1	Introduction	109
4.2	Electronic Structure Theory of Semiconductor Superlattices	113
4.2.1	Overview of Theoretical Electronic Structure Methods	113
4.2.2	k - p Electronic Structure Theory of Semiconductor Superlattices	114
4.3	InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Strained-Layer Superlattices	122
4.3.1	Introduction	122
4.3.2	Optical Properties of InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Superlattices	124
4.3.3	Electronic and Transport Properties of InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Superlattices	130
4.3.4	Growth Considerations for InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Superlattices	131
4.4	Experimental Situation	131
4.5	Conclusion	136
	References	136
Chapter 5	Infrared Detectors Using SiGe/Si Quantum Well Structures	139
5.1	Introduction	140
5.2	Growth of SiGe Strained Layers	141
5.3	Band Structures and Properties of SiGe Layers Under Strain	144
5.3.1	Conduction Band Splitting of Si and Ge Under Strain	144
5.3.2	Valence Band Splitting of Strained Si and Ge	145
5.3.3	Band Offsets for Strained Si/Ge Systems	146
5.4	Physics of Intersubband Transitions	152
5.4.1	Elements of Intersubband Transition of [Gamma]-Point Quantum Wells	152
5.4.2	Transition Between Superlattice Minibands	156
5.4.3	Many-Body Effects in Intersubband Transition	158
5.4.4	Electron Intersubband Transition of General Valley n-Type Quantum Wells	160
5.4.5	Experimental Observation of Intersubband Absorption of (100)- and (110)-Oriented Si and SiGe	172
5.5	p-Type Intersubband Transition	180
5.5.1	Intersubband Transitions in [delta]-Doped Quantum Wells	184
5.5.2	Tuning of Intersubband Transition Energy by Doping	184
5.5.3	Inter-Valence Band Transitions	188
5.6	p-Type Intersubband and Free Carrier Detectors	194
5.6.1	Photoresponse	196
5.6.2	Photoexcited Carrier Transport	199
5.6.3	Detectivity	200
5.7	Prospective	201
5.8	Conclusion	202
	Acknowledgments	202
	References	202
Chapter 6	Type III Superlattices for Long-Wavelength Infrared Detectors: The HgTe/CdTe System	207
6.1	Introduction	207
6.2	Band Structure Calculations	208
6.3	Basic Materials Properties	213
6.3.1	Peculiarities of HgTe/CdTe Superlattice Growth	213
6.3.2	Structural Properties and Defects	216
6.3.3	Structural Stability and Interdiffusion	219
6.3.4	Absorption Coefficient	222
6.3.5	Magneto-Optics	227
6.3.6	Intrinsic Carrier Concentration and In-Plane Transport	229
6.4	Properties Directly Affecting Detector Performance	235
6.4.1	Extrinsic Doping and Carrier Concentration Control	235
6.4.2	Control of Bandgap in HgTe/CdTe Superlattices	239
6.4.3	Carrier Transport, Tunneling, and Charge Collection Efficiency in the Growth Direction	242
6.4.4	Minority Carrier Lifetime	244
6.5	HgTe/CdTe Detector Fabrication	247
6.6	Conclusion	254
	References	255
	Index	261