Ultrawide Bandgap Semiconductors

by Yuji Zhao (Editor)

Overview

Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. - Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices - Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials

Product Details

ISBN-13:	9780128228715
Publisher:	Elsevier Science & Technology Books
Publication date:	07/26/2021
Series:	Semiconductors and Semimetals , #107
Sold by:	Barnes & Noble
Format:	eBook
Pages:	480
File size:	87 MB
Note:	This product may take a few minutes to download.

About the Author

Yuji Zhao is an Assistant Professor of Electrical Engineering at Arizona State University (ASU), where he leads the GaN research efforts at ASU. He received the Ph.D degree from University of California Santa Barbara (UCSB) in 2012 under the supervision of Nobel Laureate Professor Shuji Nakamura. Prof. Zhao’s research interests are in the field of wide bandgap materials and devices for applications in power electronics, RF and power ICs, and quantum photonics. He has authored/co-authored more than 140 journal and conference publications, 3 book chapters, and over 20 patents. Prof. Zhao is the receipt of 2019 Presidential Early Career Award for Scientists and Engineers, 2017 ASU Fulton Outstanding Assistant Professor Award, 2016 DTRA Young Investigator Award, 2015 NASA Early Career Faculty Award, 2015 SFAz Bisgrove Scholar Faculty Award, and 2010–2013 UCSB SSLEC Outstanding Research Award. He has served as a technical committee member for various international conferences such as CLEO, ECS Meeting, International Conference on Crystal Growth and Epitaxy, International Symposium on Semiconductor Lighting Emitting Devices, etc. Prof. Zhao is a member of IEEE and MRS.

Table of Contents

1. Fundamental technologies for gallium oxide transistorsMasataka Higashiwaki2. Advanced concepts in Ga2O3 power and RF devicesWenshen Li, Debdeep Jena and Huili Grace Xing3. -(AlxGa(1−X))2O3 epitaxial growth, doping and transportNidhin Kurian Kalarickal and Siddharth Rajan4. Thermal science and engineering of β-Ga2O3 materials and devicesZhe Cheng, Jingjing Shi, Chao Yuan, Samuel Kim and Samuel Graham5. Controlling different phases of gallium oxide for solar-blind photodetector applicationXiaolong Zhao, Mengfan Ding, Haiding Sun and Shibing Long6. Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applicationsYuanpeng Wu, Ping Wang, Emmanouil Kioupakis and Zetian Mi7. High-Al-content heterostructures and devicesRobert Kaplar, Albert Baca, Erica Douglas, Brianna Klein, Andrew Allerman, Mary Crawford and Shahed Reza8. AlN nonlinear optics and integrated photonicsXianwen Liu, Alexander W. Bruch and Hong. X. Tang9. Material epitaxy of AlN thin filmsShangfeng Liu and Xinqiang Wang10. Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrumHong Chen, Jingan Zhou, Houqiang Fu and Yuji Zhao11. AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodesHaiding Sun, Feng Wu, Jiangnan Dai and Changqing Chen12. Electrical transport properties of hexagonal boron nitride epilayersSamuel Grenadier, Avisek Maity, Jing Li, Jingyu Lin and Hongxing Jiang

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From the Publisher

Fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond