Book Your Summer Shop NowBook Your Summer Shop Now

Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

eBook
$159.00
Formats

Available on compatible , the free NOOK App, and in My Digital Library

NOOK App

Download NOOK app

NOOK Devices

NOOK eReaders

  • NOOK GlowLight 4 Plus
  • NOOK GlowLight 4e
  • NOOK GlowLight 4
  • NOOK GlowLight Plus 7.8"
  • NOOK GlowLight 3
  • NOOK GlowLight Plus 6"

NOOK Tablets

  • NOOK 9" Lenovo Tablet
  • NOOK 10" HD Lenovo Tablet
  • NOOK Tablet 7" & 10.1"
  • NOOK by Samsung Galaxy Tab 7.0 [Tab A and Tab 4]
  • NOOK by Samsung [Tab 4 10.1, S2 & E]

Free NOOK Reading Apps

  • NOOK for iOS
  • NOOK for Android

BN.com website

Go to your Digital Library in My Account

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.

Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most a...