FUNDAMENTALS OF NANOTRANSISTORS

by Mark S Lundstrom

Overview

The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

Product Details

ISBN-13:	9789814571753
Publisher:	World Scientific Publishing Company, Incorporated
Publication date:	07/11/2017
Series:	LESSONS FROM NANOSCIENCE: A LECTURE NOTES SERIES , #6
Sold by:	Barnes & Noble
Format:	eBook
Pages:	388
File size:	13 MB
Note:	This product may take a few minutes to download.

Table of Contents

Introduction: The Transistor as a Black Box; Review of Semiconductors I; The Transistor — Review of Semiconductors II; The MOSFET: A Barrier-Controlled Device; MOSFET IV: Traditional Approach; MOSFET IV: The Virtual Source Model; MOS Electrostatics: Poisson Equation and the Depletion Approximation; The Gate Voltage; Bulk MOS: Subthreshold/Above Threshold; ETSOI MOS: Subthreshold/Above Threshold; 2D MOS Electrostatics; The VS Model Again; The Ballistic Nanotransistor: The Landauer Approach to Carrier Transport; Modes; The Ballistic MOSFET; Ballistic Injection Velocity; Connection to VS Model; Comparison to Experimental Results; The Quasi-Ballistic Nanotransistor: Carrier Scattering in Semiconductors; Transmission and Mean-Free-Path; The Quasi-Ballistic MOSFET; Mobility and Drain Current; Connection to the VS Model; Comparison to Experimental Results; Fundamental and Practical Limits: Fundamental Limits; Practical Limits; Heterostructure Transistors: FETs and HBTs: Heterostructure FETs; Heterostructure BJTs; Digital and Analog Circuits: The CMOS Inverter; CMOS Logic Performance; Analog/RF CMOS; Wrap-up.