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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

By N. Mohankumar (Editor)
eBook
$67.99
By N. Mohankumar (Editor)
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High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance incl...

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