Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices

The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials...