Introduction to Modeling HBTs

by Matthias Rudolph

Overview

Heterojunction bipolar transistors (HBTs) are high-performance transistor structures, and accurate HBT modeling is indispensable in helping engineers and designers achieve single-pass circuit design success. This first-of-its-kind guide provides complete hands-on understanding of available HBT models and the parameter strategies needed to use them effectively in circuit simulation. The book presents detailed coverage of state-of-the-art tools that help designers select the best model to meet specific design requirements, know what physical effects to expect, and modify or create new models to optimize simulation accuracy. Emphasizing "how to" procedures without getting bogged down in device physics, this indispensable guide puts the full power of active device modeling and circuit simulation at the designer's command.

Product Details

ISBN-13:	9781580531443
Publisher:	Artech House, Incorporated
Publication date:	04/28/2006
Series:	Artech House Microwave Library
Edition description:	1ST
Pages:	322
Product dimensions:	6.20(w) x 9.20(h) x 0.90(d)

About the Author

Matthias Rudolph is a research scientist at the Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH) in Berlin, Germany, where he is responsible for the characterization and modeling of FETs and HBTs for circuit design, and for the design of MMICs. He has written 13 journal articles and 25 conference papers on topics in the field. He received his Dr.-Ing in electrical engineering at the Darmstadt University of Technology.

Table of Contents

Introduction. HBT Modeling Basics. HBT Models. Noise Modeling. Measurements/Parameter Extraction. Summary.