Epitaxial Graphene on Silicon Carbide: Modeling, Characterization, and Applications

Epitaxial Graphene on Silicon Carbide: Modeling, Characterization, and Applications

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Product Details

ISBN-13: 9789814774208
Publisher: Pan Stanford Publishing
Publication date: 02/07/2018
Pages: 260
Product dimensions: 6.00(w) x 9.00(h) x (d)

About the Author

Gemma Rius is a Beatriu de Pinós postdoctoral fellow at the Institute of Microelectronics of Barcelona-National Center of Microelectronics (IMB-CNM) of the Spanish National Research Council (Superior Council for Scientific Research, CSIC) since 2015. She graduated in physics from the Autonomous University of Barcelona, Spain. From 2002 to 2008, she was a nanolithography engineer and PhD student at IMB-CNM, CSIC. She ws a postdoctoral researcher at Tohoku University and Toyota Technological Institute in Japan. She then joined Nagoya Institute of Technology, Japan, as assistant professor. She has been mainly working on nanostructuring of 2D materials and has been involved in carbon nanomaterials, such as graphene, for more than 12 years.

Philippe Godignon is a professor of electronic engineering, aerospace engineering, and physical chemistry at IMB-CNM. He received his PhD in electrical engineering in 1993 from the National Institute of Applied Sciences in Lyon, France. Since 1990, he has been working with the Power Devices and Systems group of IMB-CNM on Si and SiC semiconductor device design and technologies. More recently, he has also been working on the synthesis and processing of carbon-based materials (carbon nanotubes, graphene, and polymers) for nanotechnologies and biosensors. He is co-author of more than 235 publications in international journals and numerous presentation for conferences and holds 16 patents. He also participated in the creation of two companies, Graphene Nanotech S. L., Spain, and CALY Technologies, France.

Table of Contents

Epitaxial Graphene on SiC Substrate: A View from a Specialist of SiC Growth and Material Science

Gabriel Ferro

Growth Mechanism, Structures, and the Properties of Graphene on SiC {0001} Surfaces: Theoretical and Experimental Studies at the Atomic Scale

Wataru Norimatsu

Fabrication of Graphene by Thermal Decomposition of SiC

G. Reza Yazdi, Tihomir Iakimova, and Rositza Yakimova

Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC(0001)

F. Giannazzo, I. Deretzis, A. La Magna, G. Nicotra, C. Spinella, F. Roccaforte, and R. Yakimova

Theory of Graphene Growth on SiC Substrate

Hiroyuki Kageshima

Epitaxial Graphene on SiC from the Viewpoint of Planar Technology

Gemma Rius

The Beauty of Quantum Transport in Graphene

B. Jouault, F. Schopfer, and W. Poirier

Raman Spectroscopy of Graphene on Silicon Carbide

Ana Ballestar

Graphene on SiC: Chemico-Physical Characterization

Micaela Castellino and Jordi Fraxedas

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