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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
Paperback
$169.99
By Byung-Eun Park (Editor), Hiroshi Ishiwara (Editor), Masanori Okuyama (Editor), Shigeki Sakai (Editor), Sung-Min Yoon (Editor)
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This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.
Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively prog...