Neutron Transmutation Doping in Semiconductors

by J. Meese (Editor)

Overview

This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second conference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly international in scope.

Product Details

ISBN-13:	9781468482515
Publisher:	Springer US
Publication date:	11/26/2012
Edition description:	Softcover reprint of the original 1st ed. 1979
Pages:	372
Product dimensions:	7.01(w) x 10.00(h) x 0.03(d)

Table of Contents

1: Introduction.- The NTD Process - A New Reactor Technology.- 2: Radioactivity And Radiation Protection.- Detection and Identification of Potential Impurities Activated by Neutron Irradiation of Czochralski Silicon.- Nuclear Transmutation Doping From the Viewpoint of Radioactivity Formation.- 3: Ntd Device Applications And Device Physics.- Application of NTD Silicon for Power Devices.- The Advantages of NTD Silicon for High Power Semiconductor Devices.- NTD Silicon on High Power Devices.- Role of Neutron Transmutation in the Development of High Sensitivity Extrinsic Silicon IR Detector Material.- Study of the Special Characteristics of the Breakdown Process in Silicon PN-Junctions.- Resistivity Fluctuations in Highly Compensated NTD Silicon.- Transistor Gain Trimming in I2L Integrated Circuits Using the NTD Process.- 4: Reactor Facilities For Transmutation Doping.- Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-Energy Distributions for Materials Irradiated in the Low Temperature Fast Neutron Facility in CP-5.- Neutron Doping of Silicon in the Harwell Research Reactors.- Silicon Irradiation Facilities at the NBS Reactor.- General Electric Test Reactor NTD Silicon Development Program.- An Automated Irradiation Facility for Neutron Doping of Large Silicon Ingots.- High Precision Irradiation Techniques for NTD Silicon at the University of Missouri Research Reactor.- A Computer Controlled Irradiation System for the University of Missouri Research Reactor.- 5: Basic Processes—Radiation Damage And Dopant Production.- Atomic Displacement Effects in Neutron Transmutation Doping.- The Minority Carrier Lifetime of Neutron Doped Silicon.- Electrical Property Studies of Neutron Transmutation Doped Silicon.- Defect AnnealingStudies in Neutron Transmutation Doped Silicon.- Isochronal Annealing of Resistivity in Float Zone and Czochralski NTD Silicon.- Electron Spin Resonance in NTD Silicon.- Defect Levels Controlling the Behavior of NTD Silicon During Annealing.- Residual Radioactivity Measurements for High Purity Silicon Irradiated by Pile Neutrons.- Magneto-Optical Study of Shallow Donors in Transmutation Doped GaAs.- Shallow Defect Levels in Neutron Irradiated Extrinsic P-Type Silicon.- Measurements of 3 1P Concentrations Produced by Neutron Transmutation Doping of Silicon.- 6: Summary Of The Conference.- “Pursuit of the Ultimate Junction”.- Participants.