Picosecond Electronics and Optoelectronics: Proceedings of the Topical Meeting Lake Tahoe, Nevada, March 13-15, 1985

Over the past decade, we have witnessed a number of spectacular advances in the fabrication of crystalline semiconductor devices due mainly to the pro­ gress of the different techni ques of heteroepitaxy. The di scovery of two­ dimensional behavior of electrons led to the development of a new breed of ultrafast electronic and optical devices, such as modulation doped FETs, permeable base transistors, and double heterojunction transistors. Comparable progress has been made in the domain of c...