Wide Bandgap Semiconductor Spintronics

This second edition of the book presents spintronic properties of III–V nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book pays particular attention to the difference between zinc-blende GaAs- and wurtzite GaN-based structures where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. It also deals with topological insulators and discusses electrically driven zero-magnetic-field spin-splitting o...